A model of a terahertz radiation source based on a field-effect transistor

被引：1
|
作者：
Ivanov, A. A.
Ryzhii, V. I.
Vostrikova, E. A.
Chechetkin, V. M.
Oparin, A. M.
机构：
来源：
JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS | 2009年 / 54卷 / 01期
关键词：
2-DIMENSIONAL ELECTRON FLUID; CHANNEL; WAVES; SHOCK;
D O I：
10.1134/S1064226909010094
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
It is proposed to use nonlinear processes in 2D plasma in the channel of a field-effect transistor for frequency conversion (multiplication). It is shown that excitation of shock waves in the channel of a field-effect transistor by means of alternating voltage with a frequency of 10(10)-10(11) Hz applied to the transistor gate results in the appearance of high frequency harmonics in the terahertz range.
引用
收藏
页码：102 / 106
页数：5
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