Acceleration of dielectric charging in RF MEMS capacitive switches

被引:63
|
作者
Yuan, Xiaobin
Peng, Zhen
Hwang, James C. M.
Forehand, David
Goldsmith, Charles L.
机构
[1] Lehigh Univ, Dept Comp Sci & Elect Engn, Bethlehem, PA 18015 USA
[2] MEMtron Corp, Plano, TX 75075 USA
关键词
accelerated life test; charging; dielectric; lifetime; MEMS; reliability; RF; switch; temperature acceleration; trap;
D O I
10.1109/TDMR.2006.887417
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
To design and validate accelerated life tests of RF MEMS capacitive switches, acceleration factors of charging effects in switch dielectric were quantitatively characterized. From measured charging and discharging transient currents at different temperatures and control voltages, densities and time constants of dielectric traps were extracted. A charging model was constructed to predict the amount of charge injected into the dielectric and the corresponding shift in actuation voltage under different acceleration factors such as temperatures, peak voltage, duty factor, and frequency of the control waveform. Agreement was obtained between the model prediction and experimental data. It was found that temperature, peak voltage, and duty factor were critical acceleration factors for dielectric-charging effects whereas frequency had little effect on charging.
引用
收藏
页码:556 / 563
页数:8
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