Long-term RF Burn-in Effects on Dielectric Charging of MEMS Capacitive Switches

被引：1

作者：

Molinero, David ^{[1
]}

Luo, Xi ^{[1
]}

Shen, Chao ^{[1
]}

Palego, Cristiano ^{[1
]}

Hwang, James C. M. ^{[1
]}

Goldsmith, Charles L. ^{[2
]}

机构：

[1] Lehigh Univ, Bethlehem, PA 18015 USA

[2] MEMtronics Corp, Richardson, TX 75081 USA

来源：

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2013年 / 13卷 / 01期

关键词：

Dielectric films; dielectric materials; microelectromechanical devices; microwave devices; switches;

D O I：

10.1109/TDMR.2013.2246567

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper experimentally quantified the long-term effects of RF burn-in, in terms of burn-in and recovery times, and found the effects to be semipermanent. Specifically, most of the benefit could be realized after approximately 20 min of RF burn-in, which would then last for several months. Additionally, since similar effects were observed on both real and faux switches, the effects appeared to be of electrical rather than mechanical nature. These encouraging results should facilitate the application of the switches in RF systems, where high RF power could be periodically applied to rejuvenate the switches.

引用

页码：310 / 315

页数：6

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