On the Modeling of Dielectric Charging in RF-MEMS Capacitive Switches

被引：25

作者：

Papaioannou, George ^{[1
]}

Coccetti, Fabio ^{[1
]}

Plana, Robert ^{[1
]}

机构：

[1] CNRS, LAAS, F-31077 Toulouse, France

来源：

2010 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS | 2010年

关键词：

Dielectrics; dielectric charging; MEMS lifetime; capacitive switches; reliability; SILICON;

D O I：

10.1109/SMIC.2010.5422970

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The dielectric charging in RF MEMS capacitive switches is modeled. The modeling focus on charge injections processes and the calculations start from first principles. The calculations were performed on materials with uniform and exponential distribution of defects. The time and bias dependence of distribution of injected charges are derived. The dielectric charging/polarization build-up is derived and found to obey the stretched exponential law, a result being supported by experimental data in various dielectrics.

引用

页码：108 / 111

页数：4

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