Modeling of the dielectric charging kinetic for capacitive RF-MEMS

被引：21
|
作者：
Mellé, S
De Conto, D
Mazenq, L
Dubuc, D
Grenier, K
Bary, L
Vendier, O
Muraro, JL
Cazaux, JL
Plana, R
机构：
[1] CNRS, LAAS, F-31077 Toulouse 4, France
[2] Alcatel Space Ind, F-31100 Toulouse, France
来源：
2005 IEEE MTT-S International Microwave Symposium, Vols 1-4 | 2005年
关键词：
dielectric charging; Frenkel-Poole conduction; reliability; RF MEMS;
D O I：
10.1109/MWSYM.2005.1516722
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper reports on the investigation of the kinetic of the dielectric charging in capacitive RF-MEMS through an original method of stress and monitoring. This effect has been investigated through a new parameter that is the shift rate of the actuation voltages (SRAV). We demonstrate that this lifetime parameter has to be considered as a function of the applied voltage normalized by a factor which takes the contact quality between the bridge and the dielectric into account. We also demonstrate that this phenomenon is related to Frenkel-Poole conduction which takes place into the dielectric. We finally propose a model which describes the dielectric charging kinetic in capacitive RF MEMS.
引用
收藏
页码：757 / 760
页数：4
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