Reduced dielectric charging RF MEMS capacitive switch

被引：1

作者：

Mehta, Khushbu ^{[1
,2
]}

Bansal, Deepak ^{[1
,2
]}

Bajpai, Anuroop ^{[1
,2
]}

Minhas, Ashudeep ^{[1
]}

Kumar, Amit ^{[1
,2
]}

Kaur, Maninder ^{[1
]}

Kumar, Prem ^{[1
]}

Rangra, Kamaljit ^{[1
,2
]}

机构：

[1] Cent Elect Engn Res Inst, CSIR, Pilani, Rajasthan, India

[2] Acad Sci & Innovat Res AcSIR, Ghaziabad, Uttar Pradesh, India

来源：

JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS | 2018年 / 17卷 / 04期

关键词：

RF MEMS; capacitive switch; dielectric charging; transmission line; actuation electrode; RELIABILITY;

D O I：

10.1117/1.JMM.17.4.045001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The presence of dielectric charging in a switch causes stiction and drift in pull-in voltage. A design to alleviate charging issues for RF MEMS switches is proposed. An RF MEMS capacitive switch has been fabricated and characterized. Measured pull-in of the switch is <20 V and pull-up voltage is 17 V with a switching time of 78 mu s. Insertion loss and isolation of the switch are measured by varying RF power from 0 to 15 dBm at room temperature. Insertion loss and isolation of the switch are better than 0.1 and 17 dB, respectively. Resonant frequency of the device is 8.4 kHz. The switch has completed 600 million cycles. (C) 2018 Society of Photo-Optical Instrumentation Engineers (SPIE)

引用

页数：6

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