Bistability in double-barrier resonant-tunneling structures with a wide spacer layer

被引：0
|
作者：
Belyaev, AE
Vitusevich, SA
Glavin, BA
Konakova, RV
Figelski, T
Makosa, A
Kravchenko, LN
Dobrovolski, V
机构：
[1] POLISH ACAD SCI,INST PHYS,WARSAW,POLAND
[2] RES INST MOL ELECT,ZELENOGRAD,RUSSIA
来源：
INORGANIC MATERIALS | 1997年 / 33卷 / 02期
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D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Intrinsic bistability was studied in double-barrier resonant-tunneling structures with wide spacer layers. The observed bistability is associated with the processes occurring in the accumulation layer of the spacer rather than with the accumulation of charge carriers in the well confined by two barriers. The bistability in structures with the spacer shows a series of features related to the existence of two channels of electron tunneling from 2D and 3D states.
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页码：116 / 119
页数：4
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