THERMOELECTRICITY IN DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES

被引：1
|
作者：
Ermakov, V. N. [1 ]
Kruchinin, S. P. [1 ]
Fujiwara, A. [2 ]
O'Shea, S. J. [3 ]
机构：
[1] NASU, Bogolyubov Inst Theoret Phys, UA-03680 Kiev, Ukraine
[2] Japan Adv Inst Sci & Technol, Ishikawa 9231292, Japan
[3] Inst Mat Res & Engn, Singapore, Singapore
来源：
PHYSICAL PROPERTIES OF NANOSYSTEMS | 2011年
关键词：
thermoelectricity; molecular nanosystems; the resonance tunneling; BISTABILITY;
D O I：
10.1007/978-94-007-0044-4_25
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Resonant tunneling conception has been used to explain the thermoelectrical phenomenon in molecular nanosystems. Thermovoltage as a function of the temperature is calculated. The reverse of the thermovoltage sign under resonance tunneling through HUMO and LUMO levels is demonstrated. The dependence of the thermovoltage on the distance between electrodes is calculated. A result of calculations is in good agreement with experiment data.
引用
收藏
页码：311 / +
页数：2
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