Resonant tunneling through double-barrier structures on graphene

被引:5
|
作者
Deng Wei-Yin [1 ]
Zhu Rui [1 ]
Xiao Yun-Chang [2 ,3 ]
Deng Wen-Ji [1 ]
机构
[1] S China Univ Technol, Dept Phys, Guangzhou 510640, Guangdong, Peoples R China
[2] S China Univ Technol, LQIT, ICMP, Guangzhou 510006, Guangdong, Peoples R China
[3] S China Univ Technol, SPTE, Guangzhou 510006, Guangdong, Peoples R China
基金
中国国家自然科学基金;
关键词
graphene; tight-binding approximation; resonant tunneling; ADMITTANCE;
D O I
10.1088/1674-1056/23/1/017202
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Quantum resonant tunneling behaviors of double-barrier structures on graphene are investigated under the tight-binding approximation. The Klein tunneling and resonant tunneling are demonstrated for the quasiparticles with energy close to the Dirac points. The Klein tunneling vanishes by increasing the height of the potential barriers to more than 300 meV. The Dirac transport properties continuously change to the Schrodinger ones. It is found that the peaks of resonant tunneling approximate to the eigen-levels of graphene nanoribbons under appropriate boundary conditions. A comparison between the zigzag-and armchair-edge barriers is given.
引用
收藏
页数:5
相关论文
共 50 条
  • [1] Resonant tunneling through double-barrier structures on graphene
    邓伟胤
    朱瑞
    肖运昌
    邓文基
    [J]. Chinese Physics B, 2014, 23 (01) : 378 - 382
  • [2] RESONANT TUNNELING THROUGH AMORPHOUS DOUBLE-BARRIER STRUCTURES
    YAMAMOTO, H
    [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1986, 138 (01): : K71 - K73
  • [3] NONLINEAR RESONANT-TUNNELING THROUGH DOUBLE-BARRIER STRUCTURES
    DIEZ, E
    DOMINGUEZADAME, F
    SANCHEZ, A
    [J]. PHYSICS LETTERS A, 1995, 198 (5-6) : 403 - 406
  • [4] TRANSPORT IN DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES
    GOLDMAN, VJ
    TSUI, DC
    CUNNINGHAM, JE
    TSANG, WT
    [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (07) : 2693 - 2695
  • [5] THERMOELECTRICITY IN DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES
    Ermakov, V. N.
    Kruchinin, S. P.
    Fujiwara, A.
    O'Shea, S. J.
    [J]. PHYSICAL PROPERTIES OF NANOSYSTEMS, 2011, : 311 - +
  • [6] RESONANT TUNNELING IN AMORPHOUS DOUBLE-BARRIER STRUCTURES
    PORRASMONTENEGRO, N
    ANDA, EV
    [J]. PHYSICAL REVIEW B, 1991, 43 (08) : 6706 - 6711
  • [7] RESONANT TUNNELING THROUGH ABCBA-TYPE DOUBLE-BARRIER STRUCTURES
    YAMAMOTO, H
    [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1987, 141 (02): : K179 - K183
  • [8] TUNNELING ESCAPE TIME OF ELECTRONS THROUGH DOUBLE-BARRIER RESONANT-TUNNELING STRUCTURES
    ZHENG, HZ
    ZHANG, YM
    LI, HF
    LI, YX
    YANG, XP
    ZHANG, PH
    ZHANG, W
    TIAN, JF
    [J]. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1995, 28 : S179 - S183
  • [9] PIEZOREFLECTANCE CHARACTERIZATION OF DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES
    TOBER, RL
    PAMULAPATI, J
    OH, JE
    BHATTACHARYA, PK
    [J]. APPLIED PHYSICS LETTERS, 1988, 53 (10) : 883 - 885
  • [10] DYNAMICS OF DOUBLE-BARRIER RESONANT-TUNNELING STRUCTURES
    PANDEY, LN
    MURATOV, LS
    STOCKMAN, MI
    GEORGE, TF
    [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1994, 185 (01): : 151 - 161