RESONANT TUNNELING IN AMORPHOUS DOUBLE-BARRIER STRUCTURES

被引：2
|
作者：
PORRASMONTENEGRO, N
ANDA, EV
机构：
[1] UNIV AUTONOMA MADRID, DEPT FIS MAT CONDENSADA, E-28049 MADRID, SPAIN
[2] UNIV VALLE, DEPT FIS, AA 25-360, CALI, COLOMBIA
来源：
PHYSICAL REVIEW B | 1991年 / 43卷 / 08期
关键词：
D O I：
10.1103/PhysRevB.43.6706
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Using the Kubo formula for the electrical conductivity, and a tight-binding Hamiltonian represented on a Bethe lattice, we have developed a formalism to study the electronic and transport properties of amorphous double-barrier structures. Quantum size effects are analyzed as a function of the parameters of the heterostructure. The theoretical results are compared with I-V experimental curves.
引用
收藏
页码：6706 / 6711
页数：6
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