Optical and dielectric properties of dc magnetron sputtered AlN thin films correlated with deposition conditions

被引：25
|
作者：
Dimitrova, V
Manova, D
Valcheva, E
机构：
[1] Univ Rousse, Dept Phys, Rousse 7017, Bulgaria
[2] Univ Sofia, Dept Solid State Phys & Microelect, Sofia 1164, Bulgaria
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 68卷 / 01期
关键词：
DC magnetron; dielectric; optical;
D O I：
10.1016/S0921-5107(99)00221-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Thin films of AlN were grown on glass and aluminium foil substrates by reactive de magnetron sputtering. The films exhibit a columnar growth with surface roughness in the order of 8.8-5.2 nm. The optical and dielectric properties of the films were studied as a function of the nitrogen concentration in the reactive gas mixture. The refractive index and extinction coefficient were found to be in the range of 1.93 to 2.3 and 10(-4)-10(-3) at lambda = 520 nm. The real part of dielectric constant and dielectric losses were measured to be about 7.0 and 0.006-0.085, respectively, using metal-insulator-metal (MIM) structures. (C) 1999 Published by Elsevier Science S.A. All rights reserved.
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页码：1 / 4
页数：4
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