Studies on Optoelectronic Properties of DC Reactive Magnetron Sputtered CdTe Thin Films

Cadmium telluride continues to be a leading candidate for the development of cost effective photovoltaics for terrestrial applications. In the present work two individual metallic targets of Cd and Te were used for the deposition of CdTe thin films on mica substrates from room temperature to 300 degrees C by DC reactive magnetron sputtering method. XRD patterns of CdTe thin films deposited on mica substrates exhibit peaks at 2 theta = 27.7 degrees, 46.1 degrees and 54.6 degrees, which corresponds to reflection on (1 1 1), (2 2 0) and (3 1 1) planes of CdTe cubic structure. The intensities of XRD patterns increases with the increase of substrate temperature upto 150 degrees C and then it decreases at higher substrate temperatures. The conductivity of CdTe thin films measured from four probe method increases with the increase of substrate temperature. The activation energies (Delta E) are found to be decrease with the increase of substrate temperature. The optical transmittance spectra of CdTe thin films deposited on mica have a clear interference pattern in the longer wavelength region. The films have good transparency (T > 85 %) exhibiting interference pattern in the spectral region between 1200 - 2500 nm. The optical band gap of CdTe thin films are found to be in the range of 1.48 - 1.57. The refractive index, n decreases with the increase of wavelength ,lambda. The value of n and k increases with the increase of substrate temperature.