Nanoelectrode THz photomixer using a MOCVD-grown InGaAs thin layer

被引：0

作者：

Moon, Kiwon ^{[1
]}

Lee, Eui Su ^{[1
]}

Lee, Il-Min ^{[1
]}

Park, Dong Woo ^{[1
]}

Kim, Hyun Soo ^{[1
]}

Paark, Jeong-Woo ^{[1
]}

Han, Sang-Pil ^{[1
]}

Choi, Kyeong Sun ^{[1
]}

Park, Kyung Hyun ^{[1
]}

机构：

[1] Elect & Telecommun Res Inst ETRI, Terahertz Basic Res Sect, Daejeon, South Korea

来源：

2017 42ND INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) | 2017年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

By adopting nanoelectrodes, the performances of THz photo-conductive antennas (PCAs) and photomixers (PMs) have been significantly improved. On the extension of our previous works, here we present a nanoelectrode PM for homodyne THz detection, free from low-temperature-grown semiconductors. It was realized by utilizing the electric field enhancement effect by the nanoelectrode, which may be applied to various kinds of optoelectronic devices in general.

引用

页数：2

共 50 条

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