Nanoelectrode THz photomixer using a MOCVD-grown InGaAs thin layer

被引：0
|
作者：
Moon, Kiwon [1 ]
Lee, Eui Su [1 ]
Lee, Il-Min [1 ]
Park, Dong Woo [1 ]
Kim, Hyun Soo [1 ]
Paark, Jeong-Woo [1 ]
Han, Sang-Pil [1 ]
Choi, Kyeong Sun [1 ]
Park, Kyung Hyun [1 ]
机构：
[1] Elect & Telecommun Res Inst ETRI, Terahertz Basic Res Sect, Daejeon, South Korea
来源：
2017 42ND INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) | 2017年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
By adopting nanoelectrodes, the performances of THz photo-conductive antennas (PCAs) and photomixers (PMs) have been significantly improved. On the extension of our previous works, here we present a nanoelectrode PM for homodyne THz detection, free from low-temperature-grown semiconductors. It was realized by utilizing the electric field enhancement effect by the nanoelectrode, which may be applied to various kinds of optoelectronic devices in general.
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页数：2
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