Characteristics of MOCVD-grown thin p-clad InGaAs quantum-dot lasers

被引：8
|
作者：
Lever, P [1 ]
Buda, M [1 ]
Tan, HH [1 ]
Jagadish, C [1 ]
机构：
[1] Australian Natl Univ, Dept Elect Mat Engn, Canberra, ACT 0200, Australia
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2004年 / 16卷 / 12期
关键词：
InGaAs; quantum dot(QD); semiconductor laser;
D O I：
10.1109/LPT.2004.836351
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Thin p-clad quantum-dot lasers grown by metal-organic chemical vapor deposition are fabricated and shown to lase in ground state for device lengths greater than 2.5 mm. The device characteristics are presented and the modal behavior is investigated. The threshold current density is found to be much larger for narrow (4 mum) stripe width devices than expected from the wider (50 mum) stripe width devices. This is attributed to gain saturation within the devices.
引用
收藏
页码：2589 / 2591
页数：3
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