MOCVD-grown broad area InGaAs/GaAs/InGaP laser diodes

被引：3
|
作者：
Vinokurov, DA [1 ]
Kapitonov, VA [1 ]
Nikolaev, DN [1 ]
Stankevich, AL [1 ]
Lyutetskii, AV [1 ]
Pikhtin, NA [1 ]
Slipchenko, SO [1 ]
Sokolova, ZN [1 ]
Fetisova, NV [1 ]
Arsent'ev, IN [1 ]
Tarasov, IS [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
SEMICONDUCTORS | 2001年 / 35卷 / 11期
关键词：
D O I：
10.1134/1.1418080
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A MOCVD technology for growth of InGaAs/GaAs/InGaP laser heterostructures on a modified Epiquip VP-50-RP installation was developed. Mesa stripe laser diodes with threshold current density J(th) = 100-200 A/cm(2), internal optical loss alpha (i) = 1.3-1.7 cm(-1), and internal quantum efficiency eta (i) = 60-70% have been fabricated. A CW output optical power of 5 W has been obtained for a single 100-mum-wide aperture mesa stripe laser diode emitting at 1.03 mum. It is shown that use of AlGaAs waveguide layers, which increase the conduction band barrier offset, lowers the temperature sensitivity of laser heterostructures within the temperature range 10-80 degreesC. (C) 2001 MAIK "Nauka/ Interperiodica".
引用
收藏
页码：1324 / 1328
页数：5
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