HIGH PERFORMANCE INP/INGAAS STRAINED QUANTUM WELL INTERBAND PHOTODIODES FOR NIR RESONANT PHOTODETECTION

被引：0
|
作者：
Garrigues, M. [1 ]
Gil-Sobraques, R. [1 ]
Leclercq, J-L. [1 ]
Parillaud, O. [2 ]
Decobert, J. [2 ]
Achouche, M. [2 ]
机构：
[1] LYON Univ, ECL, CNRS, INL,UMR5270, F-69134 Ecully, France
[2] Alcatel Thales 111 V lab, F-91967 Palaiseau, France
来源：
2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) | 2008年
关键词：
photodetector; InGaAs; near infrared resonant cavity; RCE; quantum well; tunable;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report experimental characterization results for Near Infrared planar photodiodes with a potential cut-off wavelength higher than 1900 nm. The active layer is made up of three compressively strained InGaAs quantum wells. This photodiode is to be finally integrated in a MOEMS tunable resonant cavity for the realization of a low cost microspectrometer intended to agro-food applications.
引用
收藏
页码：243 / +
页数：2
相关论文
共 50 条
  • [1] NIR resonant cavity enhanced InP InGaAs strained quantum well inter-band photo-detector.
    Jourba, S
    Besland, MP
    Gendry, M
    Garrigues, M
    Leclercq, JL
    Rojo-Romeo, P
    Viktorovich, P
    Cortial, S
    Hugon, X
    Pautet, C
    [J]. PHOTODETECTORS: MATERIALS AND DEVICES IV, 1999, 3629 : 307 - 318
  • [2] STRAINED INGAAS/INP QUANTUM-WELL LASERS
    TEMKIN, H
    TANBUNEK, T
    LOGAN, RA
    [J]. APPLIED PHYSICS LETTERS, 1990, 56 (13) : 1210 - 1212
  • [3] Investigation of traps in strained-well InGaAs/GaAsSb quantum well photodiodes
    Chen, W.
    Chen, B.
    Holmes, A.
    Fay, P.
    [J]. ELECTRONICS LETTERS, 2015, 51 (18) : 1439 - 1440
  • [4] Weak antilocalization in a strained InGaAs/InP quantum well structure
    Studenikin, SA
    Coleridge, PT
    Poole, P
    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 22 (1-3): : 349 - 352
  • [5] Interband transitions in strained InGaAs/AlAsSb multiple-quantum-well structures
    Mozume, T.
    Gozu, S.
    [J]. PHYSICS OF SEMICONDUCTORS, 2009, 1199 : 199 - 200
  • [6] OPTICAL CHARACTERIZATION OF STRAINED INGAAS/INP QUANTUM-WELL STRUCTURES
    WOLTER, K
    SCHWEDLER, R
    GALLMANN, B
    JAEKEL, C
    STOLLENWERK, M
    CAMASSEL, J
    LAURENTI, JP
    JUILLAGUET, S
    [J]. MICROELECTRONIC ENGINEERING, 1991, 15 (1-4) : 593 - 596
  • [7] HIGH-PERFORMANCE SINGLE AND MULTIPLE QUANTUM WELL INGAAS/INP LASERS
    TANBUNEK, T
    TEMKIN, H
    LOGAN, RA
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (11) : 2606 - 2606
  • [8] LINEWIDTH ENHANCEMENT FACTOR FOR INGAAS/INP STRAINED QUANTUM-WELL LASERS
    DUTTA, NK
    TEMKIN, H
    TANBUNEK, T
    LOGAN, R
    [J]. APPLIED PHYSICS LETTERS, 1990, 57 (14) : 1390 - 1391
  • [9] Band lineup calculations for strained InGaAs(P)/InP quantum well structures
    Han, DJ
    Chao, L
    Chan, KT
    [J]. APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 2001, 4580 : 35 - 39
  • [10] Resonant Interband Tunneling in GaAs Delta-Doped InGaAs Quantum Well Structure
    Wu, King-Kung
    [J]. JOURNAL OF ACTIVE AND PASSIVE ELECTRONIC DEVICES, 2006, 1 (3-4): : 295 - 300
12345