HIGH PERFORMANCE INP/INGAAS STRAINED QUANTUM WELL INTERBAND PHOTODIODES FOR NIR RESONANT PHOTODETECTION

被引：0

作者：

Garrigues, M. ^{[1
]}

Gil-Sobraques, R. ^{[1
]}

Leclercq, J-L. ^{[1
]}

Parillaud, O. ^{[2
]}

Decobert, J. ^{[2
]}

Achouche, M. ^{[2
]}

机构：

[1] LYON Univ, ECL, CNRS, INL,UMR5270, F-69134 Ecully, France

[2] Alcatel Thales 111 V lab, F-91967 Palaiseau, France

来源：

2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) | 2008年

关键词：

photodetector; InGaAs; near infrared resonant cavity; RCE; quantum well; tunable;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report experimental characterization results for Near Infrared planar photodiodes with a potential cut-off wavelength higher than 1900 nm. The active layer is made up of three compressively strained InGaAs quantum wells. This photodiode is to be finally integrated in a MOEMS tunable resonant cavity for the realization of a low cost microspectrometer intended to agro-food applications.

引用

页码：243 / +

页数：2

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