Investigation of traps in strained-well InGaAs/GaAsSb quantum well photodiodes

被引：8
|
作者：
Chen, W. [1 ]
Chen, B. [2 ]
Holmes, A. [2 ]
Fay, P. [1 ]
机构：
[1] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA
[2] Univ Virginia, Dept Elect & Comp Engn, Charlottesville, VA 22904 USA
来源：
ELECTRONICS LETTERS | 2015年 / 51卷 / 18期
基金：
美国国家科学基金会;
关键词：
quantum well devices; photodiodes; gallium arsenide; indium alloys; antimony alloys; crystal defects; deep level transient spectroscopy; electron traps; hole traps; quantum well photodiode; nonzero net strain; detection wavelength; midinfrared region; dark current; structure defect; performance limiting factor; low-frequency noise spectroscopy; trap investigation; strained-well photodiode heterostructure; InGaAs-GaAsSb; SPECTROSCOPY;
D O I：
10.1049/el.2015.2191
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
InP-based strained-well InGaAs/GaAsSb quantum well photodiodes with non-zero net strain can be used to extend detection wavelengths well into the mid-infrared region. However, excess dark current due to defects in the structure can be a performance limiting factor in photodiodes of this type. In this reported work, both low-frequency noise spectroscopy and deep level transient spectroscopy were used to investigate traps in prototypical strained-well photodiode heterostructures. Two distinct traps were identified and their electrical and physical properties and distributions have been evaluated.
引用
收藏
页码：1439 / 1440
页数：2
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