Band lineup calculations for strained InGaAs(P)/InP quantum well structures

被引：0
|
作者：
Han, DJ [1 ]
Chao, L [1 ]
Chan, KT [1 ]
机构：
[1] Beijing Normal Univ, Inst Low Energy Nucl Phys, Minist Educ, Key Lab Beam Technol & Mat Modif, Beijing 100875, Peoples R China
来源：
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS | 2001年 / 4580卷
关键词：
band lineup; quantum well; InP;
D O I：
10.1117/12.445001
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We use empirical equations verified indirectly by experimental results in first priority to calculate band lineup and other parameters related to optical gain calculations for strained InGaAsP/InP quantum well (QW) structures, the parameters without such known empirical equations are calculated by interpolation scheme from binary or ternary compound that consists the quaternary alloys. This approach may sacrifice the systematical feature but the results are more accurate.
引用
收藏
页码：35 / 39
页数：5
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