Analysis of 2-MeV electron-irradiation induced degradation in FD-SOI MOSFETs fabricated on ELTRAN and UNIBOND wafers

被引：2

作者：

Hayama, Kiyoteru ^{[1
]}

Takakura, Kenichiro

Ohyama, Hidenori

Rafi, Joan Marc

Mercha, Abdelkarim

Simoen, Eddy

Claeys, Cor

机构：

[1] Kumamoto Natl Coll Technol, Kumamoto 8611102, Japan

[2] CSIC, CNM, Inst Microelect Barcelona, Bellaterra 08193, Spain

[3] IMEC, B-3001 Louvain, Belgium

[4] Katholieke Univ Leuven, Dept Elect Engn, Louvain, Belgium

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2006年 / 53卷 / 04期

关键词：

electron irradiation; FD-SOI; MOSFET; EL-TRAN; UNIBOND;

D O I：

10.1109/TNS.2006.880925

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The degradation of the electrical performance of 2-MeV electron-irradiated thin gate oxide FD-SOI MOSFETs fabricated on ELTRAN and UNIBOND wafers is reported. The difference of the degradation is examined by analyzing the extracted MOS-transistor parameters. The degradation of the performance is discussed taking into account the front-back gate coupling effect and the floating body effect.

引用

页码：1939 / 1944

页数：6

共 16 条

[1] Impact on the back gate degradation in partially depleted SOI n-MOSFETs by 2-MeV electron irradiation
Hayama, K.
Takakura, K.
Shigaki, K.
Ohyama, H.
Rafi, J. M.
Mercha, A.
Simoen, E.
Claeys, C.
[J]. MICROELECTRONICS RELIABILITY, 2006, 46 (9-11) : 1731 - 1735
[2] Dose rate dependence of the back gate degradation in thin gate oxide PD-SOI MOSFETs by 2-MeV electron irradiation
Hayama, K.
Takakura, K.
Yoneoka, M.
Ohyama, H.
Rafi, J. M.
Mercha, A.
Simoen, E.
Claeys, C.
[J]. MICROELECTRONIC ENGINEERING, 2007, 84 (9-10) : 2125 - 2128
[3] Influence of an accumulation back-gate voltage on the low-frequency noise spectra of 0.13 μm fully-depleted SOI MOSFETs fabricated on ELTRAN and UNIBOND wafers
Lukyanchikova, N
Garbar, N
Smolanka, A
Simoen, E
Claeys, C
[J]. ESSDERC 2004: PROCEEDINGS OF THE 34TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2004, : 357 - 360
[4] Effect of high-temperature electron irradiation in thin gate oxide FD-SOI n-MOSFETs
Hayama, K
Takakura, K
Ohyama, H
Rafí, JM
Simoen, E
Mercha, A
Claeys, C
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2005, 52 (06) : 2392 - 2397
[5] Degradation of electrical performance and floating body effect in ultra thin gate oxide FD-SOI n-MOSFETs by 7.5-MeV proton irradiation
Hayama, K
Takakura, K
Ohyama, H
Mercha, A
Simoen, E
Claeys, C
Rafi, JM
Kokkoris, M
[J]. MICROELECTRONICS RELIABILITY, 2004, 44 (9-11) : 1721 - 1726
[6] TIME-RESOLVED PHOTOGRAPHY OF ARCING TRACKS IN DIELECTRIC MATERIALS DURING 2-MEV ELECTRON-IRRADIATION
WEI, PSP
ADAMSKI, JL
BEYMER, JR
FOGDALL, LB
CANNADAY, SS
[J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1976, 21 (03): : 296 - 297
[7] Impact of 7.5-MeV proton irradiation on front-back gate coupling effect in ultra thin gate oxide FD-SOI n-MOSFETs
Hayama, K
Takakura, K
Ohyama, H
Rafi, JM
Mercha, A
Simoen, E
Claeys, C
Kokkoris, A
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2004, 51 (06) : 3795 - 3800
[8] Radiation-induced defects in SiC-MESFETs after 2-MeV electron irradiation
Ohyama, H
Takakura, K
Uemura, K
Shigaki, K
Kudou, T
Arai, M
Kuboyama, S
Matsuda, S
Kamezawa, C
Simoen, E
Claeys, C
[J]. PHYSICA B-CONDENSED MATTER, 2006, 376 : 382 - 384
[9] Carrier lifetime analysis in thin gate oxide FD-SOI n-MOSFETs by gate-induced drain current transients
Hayama, K.
Takakura, K.
Ohyama, H.
Rafi, J. M.
Mercha, A.
Simoen, E.
Claeys, C.
[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2008, 19 (02) : 161 - 165
[10] Degradation induced by 2-MeV alpha particles on AlGaN/GaN High Electron Mobility Transistors
Danesin, F.
Zanon, F.
Gerardin, S.
Rampazzo, F.
Meneghesso, G.
Zanoni, E.
Paccagnella, A.
[J]. MICROELECTRONICS RELIABILITY, 2006, 46 (9-11) : 1750 - 1753

← 1 2 →