Carrier lifetime analysis in thin gate oxide FD-SOI n-MOSFETs by gate-induced drain current transients

被引：0
|
作者：
Hayama, K. [1 ]
Takakura, K. [1 ]
Ohyama, H. [1 ]
Rafi, J. M. [2 ]
Mercha, A. [3 ]
Simoen, E. [3 ]
Claeys, C. [3 ,4 ]
机构：
[1] Kumamoto Natl Coll Technol, Kumamoto 8611102, Japan
[2] CSIC, CNM, Inst Microelectron Barcelona, Bellaterra 08193, Spain
[3] IMEC, B-3001 Louvain, Belgium
[4] Katholieke Univ Leuven, Dept Elect Engn, Louvain, Belgium
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2008年 / 19卷 / 02期
关键词：
Transient Time; Floating Body; Body Charge; Fully Deplete; Hole Accumulation;
D O I：
10.1007/s10854-007-9301-x
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The drain current (I(D)) transients by switching the biasing condition are examined in FD-SOI MOSFETs with negative biased back gate voltage (V(BG)). Special attention is paid to the influence of the gate-induced charge/discharge of the floating body on the I(D) transient. The I(D) transient appears not only by switching the front gate voltage (V(FG)) but also by switching V(BG). It is also shown that the analysis of a small V(FG) step transient is useful to examine the lifetime under different bias conditions. All the results can be explained by the transitional change of I(D) - V(FG) characteristics at different body-charge conditions.
引用
收藏
页码：161 / 165
页数：5
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