Impact of 7.5-MeV proton irradiation on front-back gate coupling effect in ultra thin gate oxide FD-SOI n-MOSFETs

被引：19
|
作者：
Hayama, K [1 ]
Takakura, K
Ohyama, H
Rafi, JM
Mercha, A
Simoen, E
Claeys, C
Kokkoris, A
机构：
[1] Kumamoto Natl Coll Technol, Kumamoto 8611102, Japan
[2] CSIC, CNM, Inst Microelect Barcelons, Bellaterra 08193, Spain
[3] Inter Univ Microelect Ctr, IMEC, B-3001 Heverlee, Belgium
[4] Katholieke Univ Leuven, Dept Elect Engn, Louvain, Belgium
[5] Inst Nucl Phys, Athens, Greece
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2004年 / 51卷 / 06期
关键词：
fully depleted (FD)-silicon-on-insulator (SOI); gate coupling; metal oxide semiconductor field effect transistor; (MOSFET); proton irradiation; ultra thin gate;
D O I：
10.1109/TNS.2004.839153
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The degradation of deep submicron (0.1 mum) fully depleted (FD)-silicon-on-insulator (SOI) n-channel metal oxide semiconductor field effect transistors (MOSFETs) subjected to 7.5-MeV proton irradiation is reported. The radiation-induced damage is investigated by studying the static characteristics of devices with different geometries and bias conditions. Special attention is paid to the analysis of the front-back gate coupling effect by changing the back-gate bias V-BG. The change of the front and back channel parameters, the impact of the gate coupling effect and the gate-induced floating body effect are clarified. A correction procedure is proposed for the extraction of the front- and back-interface and oxide trap charge contribution to the threshold voltage shift by accounting for the front-back gate coupling.
引用
收藏
页码：3795 / 3800
页数：6
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