Impact of 7.5-MeV proton irradiation on front-back gate coupling effect in ultra thin gate oxide FD-SOI n-MOSFETs

被引：19

作者：

Hayama, K ^{[1
]}

Takakura, K

Ohyama, H

Rafi, JM

Mercha, A

Simoen, E

Claeys, C

Kokkoris, A

机构：

[1] Kumamoto Natl Coll Technol, Kumamoto 8611102, Japan

[2] CSIC, CNM, Inst Microelect Barcelons, Bellaterra 08193, Spain

[3] Inter Univ Microelect Ctr, IMEC, B-3001 Heverlee, Belgium

[4] Katholieke Univ Leuven, Dept Elect Engn, Louvain, Belgium

[5] Inst Nucl Phys, Athens, Greece

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2004年 / 51卷 / 06期

关键词：

fully depleted (FD)-silicon-on-insulator (SOI); gate coupling; metal oxide semiconductor field effect transistor; (MOSFET); proton irradiation; ultra thin gate;

D O I：

10.1109/TNS.2004.839153

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The degradation of deep submicron (0.1 mum) fully depleted (FD)-silicon-on-insulator (SOI) n-channel metal oxide semiconductor field effect transistors (MOSFETs) subjected to 7.5-MeV proton irradiation is reported. The radiation-induced damage is investigated by studying the static characteristics of devices with different geometries and bias conditions. Special attention is paid to the analysis of the front-back gate coupling effect by changing the back-gate bias V-BG. The change of the front and back channel parameters, the impact of the gate coupling effect and the gate-induced floating body effect are clarified. A correction procedure is proposed for the extraction of the front- and back-interface and oxide trap charge contribution to the threshold voltage shift by accounting for the front-back gate coupling.

引用

页码：3795 / 3800

页数：6

共 32 条

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