Impact of Biaxially Strain on the Low Frequency Noise of Silicon n-MOSFETs With Ultra Thin Gate Oxides

被引：0
|
作者：
Boutchacha, T. [1 ]
Ghibaudo, G.
Contaret, T.
机构：
[1] USTO, LECES, Dept Elect, Oran El Mnaouar, Algeria
来源：
AFRICAN REVIEW OF PHYSICS | 2008年 / 2卷
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中图分类号：
O4 [物理学];
学科分类号：
0702 ;
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页码：28 / +
页数：2
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