Correlation between density and structure in boron nitride thin films by X-ray diffraction

被引：9
|
作者：
Donner, W [1 ]
Chamera, S [1 ]
Ruhm, A [1 ]
Dosch, H [1 ]
Ulrich, S [1 ]
Ehrhardt, H [1 ]
机构：
[1] UNIV KAISERSLAUTERN,INST DUNNSCHICHTTECHNOL,D-67663 KAISERSLAUTERN,GERMANY
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1997年 / 65卷 / 01期
关键词：
D O I：
10.1007/s003390050531
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We used X-ray reflectivity and X-ray glancing-angle diffraction in order to study the crystallisation process in ion-plated thin baron nitride films. Both experiments show a distinct threshold plating energy of E-ion* = 100 eV. Above E-ion* the average density (deduced from X-ray reflectivity) shows a strong increase, indicating the sudden appearance of the cubic boron nitride phase consistent with the sp(3) concentration deduced from IR absorption spectroscopy. The inplane X-ray diffraction shows that this cubic phase consists of small nanocrystals of 70 Angstrom linear size.
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页码：1 / 4
页数：4
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