Correlation between density and structure in boron nitride thin films by X-ray diffraction

被引：9

作者：

Donner, W ^{[1
]}

Chamera, S ^{[1
]}

Ruhm, A ^{[1
]}

Dosch, H ^{[1
]}

Ulrich, S ^{[1
]}

Ehrhardt, H ^{[1
]}

机构：

[1] UNIV KAISERSLAUTERN,INST DUNNSCHICHTTECHNOL,D-67663 KAISERSLAUTERN,GERMANY

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1997年 / 65卷 / 01期

关键词：

D O I：

10.1007/s003390050531

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We used X-ray reflectivity and X-ray glancing-angle diffraction in order to study the crystallisation process in ion-plated thin baron nitride films. Both experiments show a distinct threshold plating energy of E-ion* = 100 eV. Above E-ion* the average density (deduced from X-ray reflectivity) shows a strong increase, indicating the sudden appearance of the cubic boron nitride phase consistent with the sp(3) concentration deduced from IR absorption spectroscopy. The inplane X-ray diffraction shows that this cubic phase consists of small nanocrystals of 70 Angstrom linear size.

引用

页码：1 / 4

页数：4

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