Rhombohedral and turbostratic boron nitride: X-ray diffraction and photoluminescence signatures

被引：12

作者：

Moret, Matthieu ^{[1
]}

Rousseau, Adrien ^{[1
]}

Valvin, Pierre ^{[1
]}

Sharma, Sachin ^{[2
]}

Souqui, Laurent ^{[3
]}

Pedersen, Henrik ^{[2
]}

Hogberg, Hans ^{[2
]}

Cassabois, Guillaume ^{[1
]}

Li, Jianhan ^{[4
]}

Edgar, J. H. ^{[4
]}

Gil, Bernard ^{[1
]}

机构：

[1] Univ Montpellier, CNRS, Lab Charles Coulomb, UMR 5221, F-34095 Montpellier, France

[2] Linkoping Univ, Dept Phys Chem & Biol, SE-58183 Linkoping, Sweden

[3] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA

[4] Kansas State Univ, Tim Taylor Dept Chem Engn, Manhattan, KS 66506 USA

来源：

APPLIED PHYSICS LETTERS | 2021年 / 119卷 / 26期

基金：

美国国家科学基金会; 瑞典研究理事会;

关键词：

Boron nitride films - C-plane sapphire substrates - Metal-organic chemical vapour depositions - Optical signatures - Stackings - Trimethylboron - Turbostratic - Underlayers - Weak intensity - X- ray diffractions;

D O I：

10.1063/5.0076424

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Boron nitride (BN) layers with sp(2) bonding have been grown by metal organic chemical vapor deposition on AlN underlayers, which are deposited on c-plane sapphire substrates. Two different boron precursors were employed-trimethylboron and triethylboron-while ammonia was used as the nitrogen precursor. The BN obtained epitaxial BN films contain ordered rhombohedral (rBN) and partially ordered turbostratic (tBN) stackings as evidenced by x-ray diffraction analysis. We discriminatively identify the PL signatures of the rBN and tBN from those typical of the hexagonal (hBN) and Bernal stackings (bBN). The optical signature of tBN appears at 5.45eV, and it intercalates between the two recombination bands typical of rBN at 5.35eV (strong intensity) and 5.55eV(weaker intensity). The analogs of the high intensity band at 5.35eV in rBN sit at 5.47eV for hBN and at 5.54eV for bBN. (C) 2021 Author(s).

引用

页数：6

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