2.6 μm/h high-speed growth of GaN by RF-molecular beam epitaxy and improvement of crystal quality by migration enhanced epitaxy

被引：0
|
作者：
Sugihara, D [1 ]
Kikuchi, A [1 ]
Kusakabe, K [1 ]
Nakamura, S [1 ]
Toyoura, Y [1 ]
Yamada, T [1 ]
Kishino, K [1 ]
机构：
[1] Sophia Univ, Dept Elect & Elect Engn, Chiyoda Ku, Tokyo 1028554, Japan
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1999年 / 176卷 / 01期
关键词：
D O I：
10.1002/(SICI)1521-396X(199911)176:1<323::AID-PSSA323>3.0.CO;2-1
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
High-quality GaN films were grown by molecular beam epitaxy (MBE) using elemental Ga and rf-plasma nitrogen as source with 1.2 mu m/h growth rate. GaN films were grown on the migration enhanced epitaxy (MEE)-GaN buffers deposited on (0001) sapphire substrates. The room temperature (RT) mobility was 372 cm(2)/Vs at 1.2 x 10(17) cm(-3). Furthermore, extreme high-speed GaN growth of 2.6 mu m/h was also demonstrated by increase of radical nitrogen supply at the substrates. The electron density of Si-doped GaN films was controlled in the range of 5.3 x 10(15) to 4.9 x 10(20) cm(-3) and the room temperature mobility was 252 cm(2)/Vs at 3.4 x 10(17) cm(-3). The narrowest full width at half maximum (FWHM) of photoluminescence at 15 K was 10.5 meV.
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收藏
页码：323 / 328
页数：6
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