Improvement of cubic GaN film crystal quality by use of an AlN/GaN ordered alloy on GaAs (100) by plasma assisted molecular beam epitaxy

被引：4
|
作者：
Kimura, R [1 ]
Shigemori, A [1 ]
Shike, J [1 ]
Ishida, K [1 ]
Takahashi, K [1 ]
机构：
[1] Teikyo Univ Sci & Technol, Dept Media Sci, Uenohara, Yamanashi 4090193, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2003年 / 251卷 / 1-4期
关键词：
crystal structure; reflection high energy electron diffraction; X-ray diffraction; molecular beam epitaxy; nitrides; semiconducting III-V materials;
D O I：
10.1016/S0022-0248(02)02284-4
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We demonstrate cubic GaN film growth using a newly developed AlN/GaN ordered alloy grown on GaAs (10 0) by plasma assisted molecular beam epitaxy. A significant improvement in crystal quality was achieved by reducing the nitridation time in the initial growth stage of the III-nitride layer. Epitaxial cubic GaN films with high phase purity were successfully grown. Film crystallographic qualities were investigated by RHEED, XRD, AFM, PL and TEM observations. (C) 2002 Published by Elsevier Science B.V.
引用
收藏
页码：455 / 459
页数：5
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