Cubic GaN film growth using AlN/GaN ordered alloy by RF plasma-assisted molecular beam epitaxy

被引：0

作者：

Shigemori, A ^{[1
]}

Shike, J ^{[1
]}

Takahashi, K ^{[1
]}

Ishida, K ^{[1
]}

Kimura, R ^{[1
]}

机构：

[1] Teikyo Univ Sci & Technol, Uenohara, Yamanashi, Japan

来源：

INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS | 2002年

关键词：

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Cubic GaN films were grown on GaAs (100) using a newly introduced A1N/GaN ordered alloy fabricated by plasma-assisted molecular beam epitaxy. Dominant cubic GaN growth was confirmed by in situ reflection high-energy electron diffraction observations, photoluminescence (14 K) and X-ray diffraction measurements.

引用

页码：170 / 174

页数：5

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