Electrical characterization at cubic AlN/GaN heterointerface grown by radio-frequency plasma-assisted molecular beam epitaxy

被引：0

作者：

Kitamura, T

Ishida, Y

Shen, XQ

Nakanishi, H

Chichibu, SF

Shimizu, M

Okumura, H

机构：

[1] Natl Inst Adv Ind Sci & Technol, Power Elect Res Ctr, Tsukuba, Ibaraki 3058568, Japan

[2] Tokyo Univ Sci, Dept Elect Engn, Noda, Chiba 2788510, Japan

[3] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058577, Japan

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2001年 / 228卷 / 02期

关键词：

D O I：

10.1002/1521-3951(200111)228:2<599::AID-PSSB599>3.3.CO;2-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We successfully fabricated high quality cubic AlN/GaN heterostructures on 3C-SiC substrates by radio-frequency plasma assisted molecular beam epitaxy, and characterized their electrical properties for the first time. The Hall mobility value of 1290 cm(2)/Vs was obtained at room temperature, and it drastically increased to 7330 cm(2)/Vs at 100 K. These values as well as other electrical characterization results suggest the generation of a two-dimensional electron gas.

引用

页码：599 / 602

页数：4

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