Electrical properties of columnar Sb-doped MgZnO film grown by metalorganic chemical vapor deposition

被引：3

作者：

Kim, Byeong-Hyeok ^{[1
]}

Kim, Min-Woo ^{[2
]}

Kang, Jang-Won ^{[3
]}

Choi, Yong-Seok ^{[4
]}

Kim, Bong-Joong ^{[2
]}

Park, Seong-Ju ^{[1
,2
]}

机构：

[1] Gwangju Inst Sci & Technol, Dept Nanobio Mat & Elect, Gwangju 61005, South Korea

[2] Gwangju Inst Sci & Technol, Sch Mat Sci & Engn, Gwangju 61005, South Korea

[3] DGIST, Dept Emerging Mat Sci, Daegu 42988, South Korea

[4] Samsung Elect Co Ltd, Yongin 17113, South Korea

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2018年 / 757卷

关键词：

Oxide materials; Semiconductor; Thin films; Electronic properties; Grain boundary; P-TYPE CONDUCTIVITY; ZNO THIN-FILMS; LAYER; BOUNDARIES; TRANSPORT; EMISSION; GA;

D O I：

10.1016/j.jallcom.2018.05.023

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report on the electrical properties of columnar Sb-doped MgZnO (MgZnO:Sb) films grown by metalorganic chemical vapor deposition (MOCVD). Hall effect and C-V measurements showed different carrier types and concentrations in the columnar MgZnO:Sb film. The Hall effect measurements showed both n-type and p-type conductivity randomly across repeated measurements. In contrast, the C-V measurements showed only p-type conductivity across repeated measurements, and the hole concentration was estimated to be 1.46 x 10(19) cm(-3). We show that carrier type and concentration in columnar MgZnO:Sb films should be measured vertically rather than laterally due to the large defect scattering at the grain boundaries of the columnar structures. (C) 2018 Elsevier B.V. All rights reserved.

引用

页码：98 / 104

页数：7

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