Thermoelectric conversion efficiency in IV-VI semiconductors with reduced thermal conductivity

被引:9
|
作者
Ishida, Akihiro [1 ]
Thao, Hoang Thi Xuan [1 ]
Yamamoto, Hidenari [2 ]
Kinoshita, Yohei [2 ]
Ishikiriyama, Mamoru [2 ]
机构
[1] Shizuoka Univ, Fac Engn, Hamamatsu, Shizuoka 4328561, Japan
[2] Toyota Motor Co, Susono 4101193, Japan
来源
AIP Advances | 2015年 / 5卷 / 10期
关键词
SILICON NANOWIRES; PERFORMANCE; SUPERLATTICES; FIGURE; MERIT; PBTE;
D O I
10.1063/1.4934933
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Mid-temperature thermoelectric conversion efficiencies of the IV-VI materials were calculated under the Boltzmann transport theory of carriers, taking the Seebeck, Peltier, and Thomson effects into account. The conversion efficiency was discussed with respect to the lattice thermal conductivity, keeping other parameters such as Seebeck coefficient and electrical conductivity to the same values. If room temperature lattice thermal conductivity is decreased up to 0.5W/mK, the conversion efficiency of a PbS based material becomes as high as 15% with the temperature difference of 500K between 800K and 300K. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
引用
收藏
页数:7
相关论文
共 50 条
  • [21] IV-VI semimagnetic semiconductors: Recent developments
    Story, T
    ACTA PHYSICA POLONICA A, 1998, 94 (02) : 189 - 197
  • [22] Anomalous Hall effect in IV-VI semimagnetic semiconductors
    Brodowska, B.
    Dobrowolski, W.
    Arciszewska, M.
    Slynko, E. I.
    Dugaev, V. K.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2006, 423 (1-2) : 205 - 207
  • [23] Faraday effect in epitaxial films of IV-VI semiconductors
    Herbst, W
    Pascher, H
    Bauer, G
    NARROW GAP SEMICONDUCTORS 1995, 1995, (144): : 140 - 144
  • [25] CRYSTAL BINDING-ENERGIES OF THE IV-VI SEMICONDUCTORS
    TANAKA, H
    MORITA, A
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1979, 46 (02) : 523 - 529
  • [26] Anomalous Hall effect in IV-VI magnetic semiconductors
    Dyrdal, A.
    Dugaev, V. K.
    Barnas, J.
    PHYSICAL REVIEW B, 2008, 78 (24)
  • [27] Anomalous Hall effect in IV-VI semimagnetic semiconductors
    Brodowska, B.
    Dobrowolski, W.
    Arciszewska, M.
    Slynko, E.I.
    Dugaev, V.K.
    Journal of Alloys and Compounds, 2006, 423 (1-2 SPEC. ISS.): : 205 - 207
  • [28] Temperature dependence of the magnetic susceptibility in IV-VI semiconductors
    Volkov, BA
    Ruchaiskii, OM
    PHYSICS OF THE SOLID STATE, 1998, 40 (01) : 50 - 54
  • [29] CRYSTAL-GROWTH OF IV-VI SEMICONDUCTORS IN A CENTRIFUGE
    RODOT, H
    REGEL, LL
    TURTCHANINOV, AM
    JOURNAL OF CRYSTAL GROWTH, 1990, 104 (02) : 280 - 284
  • [30] KONDO EFFECT IN IV-VI SEMICONDUCTORS WITH NONCENTRAL IONS
    DMITRIEV, AI
    LAZORENKO, VI
    LITVINOV, VI
    LASHKAREV, GV
    JETP LETTERS, 1988, 47 (11) : 669 - 671