Thermoelectric conversion efficiency in IV-VI semiconductors with reduced thermal conductivity

被引:9
|
作者
Ishida, Akihiro [1 ]
Thao, Hoang Thi Xuan [1 ]
Yamamoto, Hidenari [2 ]
Kinoshita, Yohei [2 ]
Ishikiriyama, Mamoru [2 ]
机构
[1] Shizuoka Univ, Fac Engn, Hamamatsu, Shizuoka 4328561, Japan
[2] Toyota Motor Co, Susono 4101193, Japan
来源
AIP Advances | 2015年 / 5卷 / 10期
关键词
SILICON NANOWIRES; PERFORMANCE; SUPERLATTICES; FIGURE; MERIT; PBTE;
D O I
10.1063/1.4934933
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Mid-temperature thermoelectric conversion efficiencies of the IV-VI materials were calculated under the Boltzmann transport theory of carriers, taking the Seebeck, Peltier, and Thomson effects into account. The conversion efficiency was discussed with respect to the lattice thermal conductivity, keeping other parameters such as Seebeck coefficient and electrical conductivity to the same values. If room temperature lattice thermal conductivity is decreased up to 0.5W/mK, the conversion efficiency of a PbS based material becomes as high as 15% with the temperature difference of 500K between 800K and 300K. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
引用
收藏
页数:7
相关论文
共 50 条
  • [11] RESONANT SCATTERING OF CARRIERS IN IV-VI SEMICONDUCTORS
    KAIDANOV, VI
    NEMOV, SA
    RAVICH, YI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1992, 26 (02): : 113 - 125
  • [12] Anomalous Hall Effect in IV-VI Semiconductors
    Dyrdal, A.
    Dugaev, V. K.
    Barnas, J.
    Brodowska, B.
    Dobrowolski, W.
    ACTA PHYSICA POLONICA A, 2009, 115 (01) : 287 - 289
  • [13] Optical properties of graphene and IV-VI semiconductors
    Falkovsky, L. A.
    PHYSICS-USPEKHI, 2008, 51 (09) : 887 - 897
  • [14] IV-VI ferromagnetic semiconductors recent studies
    Dobrowolski, W.
    Arciszewska, M.
    Brodowska, B.
    Domukhovski, V.
    Dugaev, V. K.
    Grzeda, A.
    Kuryliszyn-Kudelska, I.
    Wojcik, M.
    Slynko, E. I.
    SCIENCE OF SINTERING, 2006, 38 (02) : 109 - 116
  • [15] CHARGE STATES OF VACANCIES IN IV-VI SEMICONDUCTORS
    PANKRATOV, OA
    POVAROV, PP
    SOLID STATE COMMUNICATIONS, 1988, 66 (08) : 847 - 853
  • [16] LOCAL DIPOLE FORMATION IN IV-VI SEMICONDUCTORS
    Holm, Kristoffer
    Roth, Nikolaj
    Brummerstedt Iversen, Bo
    ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES, 2019, 75 : E444 - E444
  • [17] PHYSICOCHEMICAL INTERACTION OF METALS WITH IV-VI SEMICONDUCTORS
    TOMASHIK, VN
    GRYTSIV, VI
    INORGANIC MATERIALS, 1995, 31 (08) : 946 - 948
  • [18] Spin Hall effect in IV-VI semiconductors
    Dyrdal, A.
    Dugaev, V. K.
    Barnas, J.
    EPL, 2009, 85 (06)
  • [19] Impact of crystal structure on the lattice thermal conductivity of the IV-VI chalcogenides
    Guillemot, Sophie
    Suwardi, Ady
    Kaltsoyannis, Nikolas
    Skelton, Jonathan
    JOURNAL OF MATERIALS CHEMISTRY A, 2024, 12 (05) : 2932 - 2948
  • [20] RAMAN INVESTIGATION OF FERROELECTRICITY IN IV-VI SEMICONDUCTORS
    SHAND, ML
    BURSTEIN, E
    BRILLSON, LJ
    FERROELECTRICS, 1974, 7 (1-4) : 283 - 285