RAMAN INVESTIGATION OF FERROELECTRICITY IN IV-VI SEMICONDUCTORS

被引：2
|
作者：
SHAND, ML
BURSTEIN, E
BRILLSON, LJ
机构：
[1] UNIV PENN,LAB RES STRUCT MATTER,PHILADELPHIA,PA 19104
[2] XEROX RES LABS,XEROX SQ W-114,ROCHESTER,NY 14600
[3] UNIV PENN,DEPT PHYS,PHILADELPHIA,PA 19104
来源：
FERROELECTRICS | 1974年 / 7卷 / 1-4期
关键词：
D O I：
10.1080/00150197408238021
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：283 / 285
页数：3
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