Anomalous Hall effect in IV-VI magnetic semiconductors

被引：6

作者：

Dyrdal, A. ^{[1
]}

Dugaev, V. K. ^{[2
,3
,4
]}

Barnas, J. ^{[1
,5
]}

机构：

[1] Adam Mickiewicz Univ, Dept Phys, PL-61614 Poznan, Poland

[2] Rzeszow Univ Technol, Dept Phys, PL-35959 Rzeszow, Poland

[3] Univ Tecn Lisboa, Inst Super Tecn, CFIF, P-1049001 Lisbon, Portugal

[4] Univ Tecn Lisboa, Inst Super Tecn, Dept Phys, P-1049001 Lisbon, Portugal

[5] Polish Acad Sci, Inst Mol Phys, PL-60179 Poznan, Poland

来源：

PHYSICAL REVIEW B | 2008年 / 78卷 / 24期

关键词：

geometry; Hall effect; IV-VI semiconductors; lead compounds; magnetic impurities; magnetic semiconductors; magnetisation; manganese compounds; spin-orbit interactions; tin compounds; topology;

D O I：

10.1103/PhysRevB.78.245208

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Topological contribution to the anomalous Hall effect in IV-VI narrow-gap semiconductors with a nonzero spontaneous magnetization due to magnetic impurities is considered theoretically. The off-diagonal conductivity is calculated in the relativistic model of the IV-VI semiconductors. Spin-orbit interaction in these compounds is strong and cannot be treated perturbatively. Therefore, it is included in the Hamiltonian of a clean (defect-free) system. Geometrical interpretation of the topological contribution to the Hall conductivity is also briefly discussed.

引用

页数：9

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