Anomalous Hall effect in IV-VI magnetic semiconductors

被引：6
|
作者：
Dyrdal, A. [1 ]
Dugaev, V. K. [2 ,3 ,4 ]
Barnas, J. [1 ,5 ]
机构：
[1] Adam Mickiewicz Univ, Dept Phys, PL-61614 Poznan, Poland
[2] Rzeszow Univ Technol, Dept Phys, PL-35959 Rzeszow, Poland
[3] Univ Tecn Lisboa, Inst Super Tecn, CFIF, P-1049001 Lisbon, Portugal
[4] Univ Tecn Lisboa, Inst Super Tecn, Dept Phys, P-1049001 Lisbon, Portugal
[5] Polish Acad Sci, Inst Mol Phys, PL-60179 Poznan, Poland
来源：
PHYSICAL REVIEW B | 2008年 / 78卷 / 24期
关键词：
geometry; Hall effect; IV-VI semiconductors; lead compounds; magnetic impurities; magnetic semiconductors; magnetisation; manganese compounds; spin-orbit interactions; tin compounds; topology;
D O I：
10.1103/PhysRevB.78.245208
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Topological contribution to the anomalous Hall effect in IV-VI narrow-gap semiconductors with a nonzero spontaneous magnetization due to magnetic impurities is considered theoretically. The off-diagonal conductivity is calculated in the relativistic model of the IV-VI semiconductors. Spin-orbit interaction in these compounds is strong and cannot be treated perturbatively. Therefore, it is included in the Hamiltonian of a clean (defect-free) system. Geometrical interpretation of the topological contribution to the Hall conductivity is also briefly discussed.
引用
收藏
页数：9
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