High breakdown voltage with low on-state resistance of p-InGaN/n-GaN vertical conducting diodes on n-GaN substrates

被引：4
|
作者：
Nishikawa, Atsushi [1 ]
Kumakura, Kazuhide [1 ]
Makimoto, Toshiki [1 ]
机构：
[1] NTT Corp, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 15期
关键词：
D O I：
10.1063/1.2360227
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
p-InGaN/n-GaN vertical conducting diodes were grown on freestanding n-GaN substrates by metal organic vapor phase epitaxy. The homoepitaxial growth produced a high-quality GaN layer, as evidenced by the full width at half maximum of the (0002) x-ray rocking curve is as low as 34 arc sec. For a diode with a 3.6-mu m-thick n-GaN layer, a high breakdown voltage (V-B) of 571 V is obtained with a low on-state resistance (R-on) of 1.23 m Omega cm(2), leading to the figure of merit, (V-B)(2)/R-on, of 265 MW/cm(2). This is the highest value among those previously reported for GaN-based vertical conducting Schottky and p-n junction diodes. (c) 2006 American Institute of Physics.
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页数：3
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