High Quality Free-standing GaN Substrates and Their Application to High Breakdown Voltage GaN p-n Diodes

被引：0

作者：

Ohta, Hiroshi ^{[1
]}

Nakamura, Tohru ^{[1
]}

Mishima, Tomoyoshi ^{[1
]}

机构：

[1] Hosei Univ, Res Ctr Micronano Sci Technol, Tokyo, Japan

来源：

2016 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK) | 2016年

关键词：

GaN; substrate; diode; power device; VOID-ASSISTED SEPARATION; VAPOR-PHASE EPITAXY;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Recent development in GaN free-standing substrates have enabled fabrications of high performance vertical structure GaN devices. This letter reviews fabrication method of the high quality GaN substrates and reports increased breakdown voltages in vertical GaN p-n diodes fabricated on the substrates. By applying multiple lightly Si doped n-GaN drift layers to the p-n diode, record breakdown voltages (V-B) of 4.7 kV combined with low specific differential on-resistance (R-on) of 1.7 m Omega cm(2) were achieved.

引用

页码：90 / 91

页数：2

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