High Breakdown Voltage and High Current Injection Vertical GaN-on-GaN p-n Diodes With Extremely Low On-Resistance Fabricated on Ammonothermally Grown Bulk GaN Substrates

被引：10
|
作者：
Taube, Andrzej [1 ]
Kaminski, Maciej [1 ,2 ]
Tarenko, Jaroslaw [1 ,2 ]
Sadowski, Oskar [1 ,2 ]
Ekielski, Marek [1 ]
Szerling, Anna [1 ]
Prystawko, Pawel [3 ]
Bockowski, Michal [3 ]
Grzegory, Izabella [3 ]
机构：
[1] Lukasiewicz Res Network Inst Microelect & Photon, PL-02668 Warsaw, Poland
[2] Warsaw Univ Technol, Inst Microelect & Optoelect, PL-00662 Warsaw, Poland
[3] Polish Acad Sci, Inst High Pressure Phys, PL-01142 Warsaw, Poland
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2022年 / 69卷 / 11期
关键词：
Ammonothermal; gallium nitride (GaN); GaN substrate; p-n diode; termination; DEVICES DEVICE PRINCIPLES; JUNCTION DIODES;
D O I：
10.1109/TED.2022.3208851
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, we report fabrication and characterization of high breakdown voltage and high current injection vertical gallium nitride (GaN)-on-GaN p-n diodes with an etched mesa structure with guard rings termination on ammonothermally grown bulk GaN substrates. Bright electroluminescence from active region under forward bias was observed with high intensity near band edge emission and low intensity defect and unintentional impurities-related bands. Fabricated devices were characterized by a high breakdown voltage up to 1940 V, a high on/off current ratio over 10(13), a high current density above 10 kA/cm(2), and an extremely low ON-resistance below 0.1 m Omega cm(2) under high current injection.
引用
收藏
页码：6255 / 6259
页数：5
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