Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates

被引：224

作者：

Saitoh, Yu ^{[1
]}

Sumiyoshi, Kazuhide ^{[1
]}

Okada, Masaya ^{[1
]}

Horii, Taku ^{[1
]}

Miyazaki, Tomihito ^{[1
]}

Shiomi, Hiromu ^{[1
]}

Ueno, Masaki ^{[1
]}

Katayama, Koji ^{[1
]}

Kiyama, Makoto ^{[1
]}

Nakamura, Takao ^{[1
]}

机构：

[1] Sumitomo Elect Ind Ltd, Semicond Technol R&D Labs, Itami, Hyogo 6640016, Japan

来源：

APPLIED PHYSICS EXPRESS | 2010年 / 3卷 / 08期

关键词：

YELLOW LUMINESCENCE; GALLIUM VACANCIES; CARBON; GAAS;

D O I：

10.1143/APEX.3.081001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Vertical GaN Schottky barrier diodes (SBDs) were fabricated on freestanding GaN substrates with low dislocation density High quality n-GaN drift-layer with an electron mobility of 930 cm(2) V(-1) s(-1) was obtained by optimizing the growth conditions by reducing the intensity of yellow luminescence using conventional photoluminescence measurements The specific on-resistance (R(on) A) and the breakdown voltage (V(B)) of the SBDs were 0 71 m Omega cm(2) and over 1100 V. respectively The figure of merit (V(B)(2)/R(on) A) was 1 7 GW/cm(2), which is the highest value among previously reported SBDs for both GaN and SiC (C) 2010 The Japan Society of Applied Physics

引用

页数：3

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