Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates

被引：224

作者：

Saitoh, Yu ^{[1
]}

Sumiyoshi, Kazuhide ^{[1
]}

Okada, Masaya ^{[1
]}

Horii, Taku ^{[1
]}

Miyazaki, Tomihito ^{[1
]}

Shiomi, Hiromu ^{[1
]}

Ueno, Masaki ^{[1
]}

Katayama, Koji ^{[1
]}

Kiyama, Makoto ^{[1
]}

Nakamura, Takao ^{[1
]}

机构：

[1] Sumitomo Elect Ind Ltd, Semicond Technol R&D Labs, Itami, Hyogo 6640016, Japan

来源：

APPLIED PHYSICS EXPRESS | 2010年 / 3卷 / 08期

关键词：

YELLOW LUMINESCENCE; GALLIUM VACANCIES; CARBON; GAAS;

D O I：

10.1143/APEX.3.081001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Vertical GaN Schottky barrier diodes (SBDs) were fabricated on freestanding GaN substrates with low dislocation density High quality n-GaN drift-layer with an electron mobility of 930 cm(2) V(-1) s(-1) was obtained by optimizing the growth conditions by reducing the intensity of yellow luminescence using conventional photoluminescence measurements The specific on-resistance (R(on) A) and the breakdown voltage (V(B)) of the SBDs were 0 71 m Omega cm(2) and over 1100 V. respectively The figure of merit (V(B)(2)/R(on) A) was 1 7 GW/cm(2), which is the highest value among previously reported SBDs for both GaN and SiC (C) 2010 The Japan Society of Applied Physics

引用

页数：3

共 50 条

[21] High breakdown voltage C-doped GaN-on-sapphire HFETs with a low specific on-resistance
Choi, Y. C.
Pophristic, M.
Peres, B.
Cha, H-Y
Spencer, M. G.
Eastman, L. F.
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2007, 22 (05) : 517 - 521
[22] A new vertical GaN Schottky barrier diode with floating metal ring for high breakdown voltage
Lee, SC
Her, JC
Kim, SS
Ha, MW
Seo, KS
Choi, YL
Han, MK
[J]. ISPSD '04: PROCEEDINGS OF THE 16TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2004, : 319 - 322
[23] Instability of On-Resistance in Vertical GaN PIN Diodes Under High-Temperature and Voltage Stress
Wang, Dawei
Mudiyanselage, Dinusha Herath
He, Ziyi
Da, Bingcheng
Fu, Houqiang
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (03) : 1681 - 1686
[24] Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate With 1010 High On/Off Current Ratio and Low Specific On-Resistance
Li, Yue
Wang, Maojun
Yin, Ruiyuan
Zhang, Jie
Tao, Ming
Xie, Bing
Hao, Yilong
Yang, Xuelin
Wen, Cheng P.
Shen, Bo
[J]. IEEE ELECTRON DEVICE LETTERS, 2020, 41 (03) : 329 - 332
[25] High-power and long-lifetime InGaN multi-quantum-well laser diodes grown on low-dislocation-density GaN substrates
Nagahama, S
Iwasa, N
Senoh, M
Matsushita, T
Sugimoto, Y
Kiyoku, H
Kozaki, T
Sano, M
Matsumura, H
Umemoto, H
Chocho, K
Mukai, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (7A): : L647 - L650
[26] Extreme reduction of on-resistance in vertical GaN p-n diodes by low dislocation density and high carrier concentration GaN wafers fabricated using oxide vapor phase epitaxy method
Takino, Junichi
Sumi, Tomoaki
Okayama, Yoshio
Kitamoto, Akira
Imanishi, Masayuki
Yoshimura, Masashi
Asai, Naomi
Ohta, Hiroshi
Mishima, Tomoyoshi
Mori, Yusuke
[J]. APPLIED PHYSICS EXPRESS, 2020, 13 (07)
[27] Mg-implanted vertical GaN junction barrier Schottky rectifiers with low on resistance, low turn-on voltage, and nearly ideal nondestructive breakdown voltage
Matys, Maciej
Kitagawa, Kazuki
Narita, Tetsuo
Uesugi, Tsutomu
Suda, Jun
Kachi, Tetsu
[J]. APPLIED PHYSICS LETTERS, 2022, 121 (20)
[28] Design Strategies for Mesa-Type GaN-Based Schottky Barrier Diodes for Obtaining High Breakdown Voltage and Low Leakage Current
Jia, Xingyu
Chen, Sung-Wen Huang
Liu, Yajin
Hou, Xu
Zhang, Yonghui
Zhang, Zi-Hui
Kuo, Hao-Chung
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (05) : 1931 - 1938
[29] Low ON-Resistance Fully-Vertical GaN-on-SiC Schottky Barrier Diode with Conductive Buffer Layer
Li, Yanjun
Yang, Shu
Liu, Kai
Cheng, Kai
Sheng, Kuang
Shen, Bo
[J]. 2022 IEEE 34TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2022, : 333 - 336
[30] No significant contribution of hole-trap-enhanced conductivity modulation in GaN p+n diodes formed on low-dislocation-density GaN substrates
Mochizuki, Kazuhiro
Ohta, Hiroshi
Horikiri, Fumimasa
Mishima, Tomoyoshi
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2022, 61 (05)

← 1 2 3 4 5 →