Schottky Source/Drain InAlN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistor with High Breakdown Voltage and Low On-Resistance

In this work, we present a novel device technology of using Schottky source/drain (SSD) in InAlN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) for off-state breakdown voltage V-BD improvement. The Schottky source/drain design can effectively prevent the source carrier injection compared to the conventional MISHEMTs, leading to enhanced V-BD in the SSD MISHEMTs. A V-BD of 460 V is obtained in an InAlN/GaN SSD MISHEMTs with low specific R-on of 2.27m Omega.cm(2), at a 170% V-BD improvement compared to conventional MISHEMTs. Despite the Schottky source/drain used, a SSD MISHEMT with a gate length of 1 mu m exhibits respectable drain current density of 416 mA/mm and transconductance of 113 mS/mm. (C) 2012 The Japan Society of Applied Physics