High Breakdown Voltage AlGaN/GaN HEMTs on Free-Standing GaN Substrate

被引：0

作者：

Ng, J. H. ^{[1
]}

Tone, K. ^{[1
]}

Asubar, J. T. ^{[1
]}

Tokuda, H. ^{[1
]}

Kuzuhara, M. ^{[1
]}

机构：

[1] Univ Fukui, Grad Sch Engn, 3-9-1 Bunkyo, Fukui 9108507, Japan

来源：

2015 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK) | 2015年

关键词：

AlGaN/GaN; HEMT; Breakdown Voltage; Free-Standing GaN Substrate; BUFFER;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we have investigated the relationship between off-state breakdown voltage and gate-to-drain distance (Lgd) for AlGaN/GaN HEMTs fabricated on a freestanding GaN substrate. The off-state breakdown voltage exhibited a linear increase up to Lgd of around 80 mu m but saturated at about 4000 V when Lgd > 80 mu m. Therefore, we proposed that when Lgd < 80 mu m, the breakdown voltage of HEMTs was dominated by leakage current under the channel and when Lgd > 80 mu m, it was determined by the leakage current outside of the channel.

引用

页数：2

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