High breakdown voltage with low on-state resistance of p-InGaN/n-GaN vertical conducting diodes on n-GaN substrates

被引：4
|
作者：
Nishikawa, Atsushi [1 ]
Kumakura, Kazuhide [1 ]
Makimoto, Toshiki [1 ]
机构：
[1] NTT Corp, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 15期
关键词：
D O I：
10.1063/1.2360227
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
p-InGaN/n-GaN vertical conducting diodes were grown on freestanding n-GaN substrates by metal organic vapor phase epitaxy. The homoepitaxial growth produced a high-quality GaN layer, as evidenced by the full width at half maximum of the (0002) x-ray rocking curve is as low as 34 arc sec. For a diode with a 3.6-mu m-thick n-GaN layer, a high breakdown voltage (V-B) of 571 V is obtained with a low on-state resistance (R-on) of 1.23 m Omega cm(2), leading to the figure of merit, (V-B)(2)/R-on, of 265 MW/cm(2). This is the highest value among those previously reported for GaN-based vertical conducting Schottky and p-n junction diodes. (c) 2006 American Institute of Physics.
引用
收藏
页数：3
相关论文
共 50 条
  • [21] InGaN MQW laser diodes grown on an n-GaN substrate with a backside n-contact
    Kuramoto, Masaru
    Yamaguchi, A. Atsushi
    Usui, Akira
    Mizuta, Masashi
    IEICE Transactions on Electronics, 2000, E83-C (04) : 552 - 559
  • [22] InGaN MQW laser diodes grown on an n-GaN substrate with a backside n-contact
    Kuramoto, M
    Yamaguchi, AA
    Usui, A
    Mizuta, M
    IEICE TRANSACTIONS ON ELECTRONICS, 2000, E83C (04): : 552 - 559
  • [23] Low Resistance Indium-based Ohmic Contacts to N-face n-GaN for GaN-based Vertical Light Emitting Diodes
    Kang, Ki Man
    Park, Min Joo
    Kwak, Joon Seop
    Kim, Hyun Soo
    Kwon, Kwang Woo
    Kim, Young Ho
    KOREAN JOURNAL OF METALS AND MATERIALS, 2010, 48 (05): : 456 - 461
  • [24] Low-resistance Ni-based Schottky diodes on freestanding n-GaN
    Lewis, L.
    Corbett, B.
    Mahony, D. O.
    Maaskant, P. P.
    APPLIED PHYSICS LETTERS, 2007, 91 (16)
  • [25] Vertical conducting ultraviolet light-emitting diodes based on p-ZnO:As/n-GaN/n-SiC heterostructure
    Shi, Zhifeng
    Zhang, Yuantao
    Wu, Bin
    Cai, Xupu
    Zhang, Jinxiang
    Xia, Xiaochuan
    Wang, Hui
    Dong, Xin
    Liang, Hongwei
    Zhang, Baolin
    Du, Guotong
    APPLIED PHYSICS LETTERS, 2013, 102 (16)
  • [26] Vertical device operation of AlGaN/GaN HEMTs on free-standing n-GaN substrates
    Sugimoto, Masahiro
    Ueda, Hiroyuki
    Kanechika, Masakazu
    Soejima, Narumasa
    2007 POWER CONVERSION CONFERENCE - NAGOYA, VOLS 1-3, 2007, : 353 - +
  • [27] N-GaN column arrays on the vertical InGaN/GaN blue LEDs formed by maskless dry etching
    Doan, Manh-Ha
    Lee, Jaejin
    CRYSTAL RESEARCH AND TECHNOLOGY, 2014, 49 (2-3): : 116 - 121
  • [28] Growth and fabrication of high reverse breakdown heterojunction n-GaN: p-6H-SiC diodes
    Sampath, AV
    Bhattacharyya, A
    Singh, R
    Eddy, CR
    Lamarre, P
    Stacey, WF
    Morris, RS
    Moustakas, TD
    GAN AND RELATED ALLOYS-2002, 2003, 743 : 449 - 454
  • [29] Very low resistance multilayer ohmic contact to n-GaN
    Fan, ZF
    Mohammad, SN
    Kim, W
    Aktas, O
    Botchkarev, AE
    Morkoc, H
    APPLIED PHYSICS LETTERS, 1996, 68 (12) : 1672 - 1674
  • [30] Schottky diodes of Ni/Au on n-GaN grown on sapphire and SiC substrates
    Zhang, BJ
    Egawa, T
    Zhao, GY
    Ishikawa, H
    Umeno, M
    Jimbo, T
    APPLIED PHYSICS LETTERS, 2001, 79 (16) : 2567 - 2569
12345