Lateral Capacitance-Voltage Method of NanoMOSFET for Detecting the Hot Carrier Injection

被引：2

作者：

Atamuratov, Atabek E. ^{[1
]}

Yusupov, Ahmed ^{[2
]}

Atamuratova, Zukhra A. ^{[1
]}

Chedjou, Jean Chamberlain ^{[3
]}

Kyamakya, Kyandoghere ^{[3
]}

机构：

[1] Urgench State Univ, Phys Dept, Kh Olimjan Str 14, Urgench 220100, Uzbekistan

[2] Tashkent Univ Informat Technol, Dept Elect & Radio Engn, A Temur Str 108, Tashkent 100200, Uzbekistan

[3] Univ Klagenfurt, Dept Transportat Informat, A-9020 Klagenfurt, Austria

来源：

APPLIED SCIENCES-BASEL | 2020年 / 10卷 / 21期

关键词：

MOSFET; degradation; lateral transition capacitance; threshold voltage; local charge; BIAS-TEMPERATURE INSTABILITY; N-CHANNEL; DEGRADATION; MOSFETS;

D O I：

10.3390/app10217935

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Featured Applications The results obtained in this work could serve many purposes such as the various reliability issues related to MOSFETs degradation under electrical stress. In this paper, the dependence of the capacitance of lateral drain-substrate and source-substrate junctions on the linear size of the oxide trapped charge in MOSFET is simulated. It is shown that, at some range of linear sizes of the trapped charge, the capacitance of lateral junctions linearly depends on the linear size of the trapped charge. The dependence of the difference between drain-substrate and source-substrate capacitances on the linear size of trapped charges is also simulated. The revealed dependence can be used in measurements to estimate the linear size of oxide trapped charges induced by hot carrier injection, which can occur during MOSFET operation at defined conditions.

引用

页码：1 / 9

页数：9

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