Capacitance-voltage investigation of low residual carrier density in InAs/GaSb superlattice infrared detectors

被引：3
|
作者：
Schmidt, Johannes [1 ]
Rutz, Frank [1 ]
Daumer, Volker [1 ]
Rehm, Robert [1 ]
机构：
[1] Fraunhofer Inst Appl Solid State Phys, Freiburg, Germany
来源：
INFRARED PHYSICS & TECHNOLOGY | 2017年 / 84卷
关键词：
InAs/GaSb T2SL; MWIR; Capacitance-voltage investigation; Residual carrier density;
D O I：
10.1016/j.infrared.2017.04.008
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Capacitance-voltage (CV) analysis was performed on homojunction InAs/GaSb superlattice photodiodes for the mid-infrared spectral range around 5 1.1.M. The CV investigation was carried out over a wide temperature range from 80 K up to 200 K, for two nominally identical samples from two different epitaxy systems. The characterizations were carried out with a refined measurement setup, considering the impedance range, the measured frequency range and the accessible temperature range. For the calculated residual carrier density in the nid-region of the diodes values in the low 10(14) cm(-3) and 10(15) cm(-3) ranges were found, respectively. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码：3 / 6
页数：4
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