GaN Layers Grown by MOCVD on Composite SiC Substrate

被引：0

作者：

Toth, L. ^{[1
]}

Dobos, L. ^{[1
]}

Pecz, B. ^{[1
]}

Poisson, M. A. di Forte ^{[2
]}

Langer, R. ^{[3
]}

机构：

[1] Hungarian Acad Sci, Res Inst Tech Phys & Mat Sci, POB 49, H-1525 Budapest, Hungary

[2] ALCATEL THALES III V Labs, Route Nozay, F-91460 Marcoussis, France

[3] PICOGIGA Int SAS, F-91971 Courtaboeuf, France

来源：

MICROSCOPY OF SEMICONDUCTING MATERIALS 2007 | 2008年 / 120卷

关键词：

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

GaN based high electron mobility transistor Structures were grown onto special composite Substrates by metal-organic chemical vapor deposition. These Substrates consist of a thin single crystalline SiC layer transferred onto polycrystalline SiC wafer by a technique involving ion implantation and wafer bonding. Transmission electron microscopy of these structures has proven that their epitaxial quality and defect structure is the same as of the reference samples deposited onto single crystalline bulk SiC substrate.

引用

页码：57 / +

页数：2

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