Deep level transient spectroscopic studies of MOCVD GaN layers grown on sapphire

被引：0

作者：

Sliwinski, AA

Korona, KP

Pakula, K

Baranowski, JM

机构：

来源：

ACTA PHYSICA POLONICA A | 1996年 / 90卷 / 05期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The deep level transient spectroscopy of GaN heteroepitaxial layers grown on sapphire was studied. The samples were Mg doped during the growth. The as-grown material is n-type. It becomes p-type after annealing. The samples were measured in the temperature range from 77 K to 420 K. In n-type GaN, one peak (EG1) with activation energy 0.75 eV was detected. In p-type, at least three peaks were observed: AS1 at temperature about 300 K and AS2, AS3 at about 400 K. The dominating one is AS3. It has an activation energy about 1.1 eV.

引用

页码：955 / 958

页数：4

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